tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 1 toshiba led lamp tlre16t,tlrme16t,tlse16t tloe16t,TLYE16T panel circuit indicator 5mm package ingaa ? p technology all plastic mold type transparent lens high intensity light emission excellent low corrent light output applications: outdoor message signboards, safety equipment line ? up product name color material tlre16t red ingaa ? p tlrme16t red ingaa ? p tlse16t red ingaa ? p tloe16t orange ingaa ? p TLYE16T yellow ingaa ? p maximum ratings (ta = 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlre16t 50 4 120 tlrme16t 50 4 120 tlse16t 50 4 120 tloe16t 50 4 120 TLYE16T 50 4 120 40~100 40~120 unit in mm jedec D eiaj D toshiba D weight: 0.31 g
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 2 electrical and optical characteristics (ta = 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p ? i f min typ. i f typ. max i f max v r tlre16t 630 (644) 20 20 272 800 20 1.9 2.4 20 50 4 tlrme16t 626 (636) 23 20 272 1200 20 1.9 2.4 20 50 4 tlse16t 613 (623) 20 20 476 1500 20 1.9 2.4 20 50 4 tloe16t 605 (612) 20 20 850 2000 20 2.0 2.4 20 50 4 TLYE16T 587 (590) 17 20 476 1500 20 2.0 2.4 20 50 4 unit nm ma mcd ma v ma a v precautions please be careful of the following: soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: below the lead stopper) if the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 3 tlre16t allowable forward current i f (ma) 80 0 i f ? ta ambient temperature t a ( ) 20 40 60 0 100 20 40 60 80 120 relative luminous intensity i v i v ? t c case temperature tc ( ) 0.1 0.3 0.5 3 80 -20 0 20 40 60 1 i v ? i f luminous intensity i v (mcd) forward current f ( ) ta = 2 5 1 10 100 3000 10 1000 100 wavelength (nm) relative luminous intensity _ wavelength relative luminous intensity 1.0 0 0.2 0.4 0.6 0.8 580 600 620 640 660 700 680 i f = 20ma ta = 2 5 radiation pattern ta= 25 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 1.0 forward current i f (ma) i f ? v f forward voltage v f (v) 100 1.6 1 3 5 10 30 1.8 1.9 2.0 2.1 2.2 1.7 50 2.3 ta = 2 5
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 4 tlrme16t allowable forward current i f (ma) 80 0 i f ? ta ambient temperature t a ( ) 20 40 60 0 100 20 40 60 80 120 relative luminous intensity _ wavelength wavelength (nm) relative luminous intensity 1.0 0 0.2 0.4 0.6 0.8 580 600 620 640 660 700 i f = 20ma ta = 2 5 680 forward current i f (ma) i f ? v f forward voltage v f (v) 100 1.6 1 3 5 10 30 1.8 1.9 2.0 2.1 2.2 1.7 50 2.3 ta = 2 5 relative luminous intensity i v i v ? t c case temperature tc ( ) 0.1 0.3 1 10 80 -20 0 20 40 60 3 5 0.5 i v ? i f luminous intensity i v (mcd) forward current f ( ) 1 10 100 10000 100 1000 ta = 2 5 10 radiation pattern ta= 25 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 1.0
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 5 tlse16t relative luminous intensity i v i v ? t c case temperature tc ( ) 0.1 0.3 0.5 3 80 -20 0 20 40 60 1 i f ? v f forward current i f (ma) forward voltage v f (v) 100 1.6 1 3 5 10 30 1.8 1.9 2.0 2.1 2.2 1.7 50 2.3 ta = 2 5 allowable forward current i f (ma) 80 0 i f ? ta ambient temperature t a ( ) 20 40 60 0 100 40 60 80 120 20 i v ? i f luminous intensity i v (mcd) forward current f ( ) 1 10 100 10000 10 1000 100 ta = 2 5 relative luminous intensity wavelength wavelength (nm) relative luminous intensity 1.0 0 0.2 0.4 0.6 0.8 580 600 620 640 660 560 i f = 20ma ta = 2 5 680 radiation pattern ta= 25 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 1.0
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 6 tloe16t allowable forward current i f (ma) 80 0 i f ? ta ambient temperature t a ( ) 20 40 60 0 100 20 40 60 80 120 relative luminous intensity i v i v ? t c case temperature tc ( ) 0.1 0.3 0.5 3 80 -20 0 20 40 60 1 relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity 1.0 0 0.2 0.4 0.6 0.8 580 600 620 640 660 560 i f = 20ma ta = 2 5 540 i f ? v f forward current i f (ma) forward voltage v f (v) 100 1.6 1 3 5 10 30 1.8 1.9 2.0 2.1 2.2 1.7 50 2.3 ta = 2 5 i v ? i f luminous intensity i v (mcd) forward current f ( ) 1 10 100 10000 10 1000 100 ta = 2 5 radiation pattern ta= 25 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 1.0
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 7 TLYE16T allowable forward current i f (ma) 80 0 i f ? ta ambient temperature t a ( ) 20 40 60 0 100 20 40 60 80 120 i v ? i f luminous intensity i v (mcd) forward current f ( ) 1 10 100 10000 10 1000 100 ta = 2 5 relative luminous intensity i v i v ? t c case temperature tc ( ) 0.1 0.3 0.5 3 80 -20 0 20 40 60 1 relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity 1.0 0 0.2 0.4 0.6 0.8 580 600 620 640 660 560 i f = 20ma ta = 2 5 540 50 2.3 i f ? v f forward current i f (ma) forward voltage v f (v) 100 1.6 1 3 5 10 30 1.8 1.9 2.0 2.1 2.2 1.7 ta = 2 5 radiation pattern ta= 25 0 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 1.0
tlre16t,tlrme16t,tlse16t,tloe16t,TLYE16T 2002-09-25 8 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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